OP515B
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Краткое описание:
NPN Phototransistor, 935nm, 30V, 50mA, Through Hole
Дополнительная информация
NPN phototransistor designed for optical sensing applications, featuring a 935nm peak sensitivity wavelength. Offers a 30V collector-emitter breakdown voltage and a maximum collector current of 50mA. This through-hole mount component operates within a temperature range of -55°C to 125°C, with a maximum power dissipation of 100mW. Packaged in bulk for convenience.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Max Collector Current | 50mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
