OP538FB
Краткое описание:
NPN Phototransistor, 30V, 20.5mA, 100°C, Through Hole
Дополнительная информация
The OP538FB is a NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 20.5mA. It operates within a temperature range of -40°C to 100°C and has a maximum power dissipation of 100mW. The device is packaged in a radial package with a top view orientation and is available in bulk quantities.
| RoHS | Not Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Top View |
| Package/Case | Radial |
| Viewing Angle | 130° |
| RoHS Compliant | No |
| Package Quantity | 100 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 20.5mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Saturation Voltage | 1V |
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