OP550B
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Краткое описание:
Phototransistor NPN 30V 935nm Radial Through Hole
Дополнительная информация
NPN phototransistor featuring a 930nm wavelength and a transparent lens. This component offers a 30V collector-emitter breakdown voltage and a maximum collector current of 4.7mA. Housed in a radial plastic package with a side view orientation, it supports through-hole mounting and operates within a temperature range of -40°C to 100°C. Maximum power dissipation is rated at 100mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.45mm |
| Height | 5.84mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lens Style | TRANSPARENT |
| Wavelength | 935nm |
| Lead Length | 12.7mm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 60° |
| RoHS Compliant | Yes |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Max Collector Current | 4.7mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
