OP555A

OP555A - TT
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Краткое описание: 30V 4.7mA NPN Phototransistor, Through Hole, -40°C to 100°C
Производитель TT

Дополнительная информация

The OP555A is a 30V NPN phototransistor from TT, packaged in a ROHS compliant plastic package. It has a maximum collector current of 4.7mA and a maximum power dissipation of 100mW. The device is designed to operate over a temperature range of -40°C to 100°C and is available in a bulk packaging option.
RoHS Compliant
Mount Through Hole
Polarity NPN
Packaging Bulk
Wavelength 935nm
Orientation Side View
Package/Case Radial
Viewing Angle 56°
RoHS Compliant Yes
Package Quantity 100
Power Dissipation 100mW
Number of Elements 1
Max Breakdown Voltage 30V
Max Collector Current 4.7mA
Max Power Dissipation 100mW
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 30V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 400mV

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