OP555B
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Краткое описание:
NPN Phototransistor, 30V, 4.7mA, 100mW, Through Hole, -40°C to 100°C
Дополнительная информация
The OP555B is a RoHS compliant, NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 4.7mA. It has a maximum power dissipation of 100mW and operates over a temperature range of -40°C to 100°C. The device is packaged in a radial package with a side view orientation and is available in a bulk packaging quantity of 100.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Side View |
| Package/Case | Radial |
| Viewing Angle | 56° |
| RoHS Compliant | Yes |
| Package Quantity | 100 |
| Power Dissipation | 100mW |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 4.7mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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