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NPN Phototransistor, IR, 890nm, 30V, TO-18
Дополнительная информация
NPN phototransistor for optical sensing applications. Features a 890nm infrared wavelength and a 25° viewing angle. This through-hole component is housed in a TO-18 package with a 2.54mm lead pitch. Maximum collector current is 50mA, with a collector-emitter breakdown voltage of 30V. Operating temperature range is -40°C to 100°C, with a maximum power dissipation of 250mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.67mm |
| Height | 5.84mm |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Lead Pitch | 2.54mm |
| Wavelength | 890nm |
| Lead Length | 19.05mm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 25° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 100 |
| Power Consumption | 250mW |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 50mA |
| Max Power Dissipation | 250mW |
| Operating Supply Voltage | 5V |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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