OP770D
Краткое описание:
NPN Phototransistor, 30V, 7mA, 100mW, Through Hole, -40°C to 100°C
Дополнительная информация
The OP770D is a RoHS compliant, NPN phototransistor with a collector emitter breakdown voltage of 30V and a maximum collector current of 7mA. It has a maximum power dissipation of 100mW and is designed for operation in temperatures ranging from -40°C to 100°C. The device is packaged in a radial, through hole package and is available in quantities of 50 in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Side View |
| Package/Case | Radial |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Max Collector Current | 7mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
