OP775C
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Краткое описание:
NPN Phototransistor 30V 2.25mA 100mW Through Hole
Дополнительная информация
The OP775C is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 2.25mA. It is designed for operation in temperatures ranging from -40°C to 100°C and has a maximum power dissipation of 100mW. The device is packaged in a radial package with a through-hole mount and is RoHS compliant. The OP775C is suitable for use in a variety of applications, including those requiring a high level of reliability and stability.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 935nm |
| Orientation | Side View |
| Package/Case | Radial |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Max Collector Current | 2.25mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |