OP802SL
Производится
Увеличить
Краткое описание:
NPN Phototransistor, 890nm, 30V VCEO, 50mA IC, TO-18
Дополнительная информация
Hermetically sealed NPN phototransistor with a 930nm wavelength, designed for through-hole mounting in a TO-18 package. Features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 30V. Offers a fall time of 7µs and a maximum power dissipation of 250mW, operating across a temperature range of -65°C to 125°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Fall Time | 7us |
| Packaging | Bulk |
| Wavelength | 890nm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 25° |
| RoHS Compliant | Yes |
| Package Quantity | 25 |
| Power Consumption | 250mW |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
