OP803SL
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Краткое описание:
NPN Phototransistor, 890nm, 30V, 50mA, TO-18
Дополнительная информация
NPN phototransistor with a 930nm wavelength, designed for through-hole mounting in a TO-18 hermetically sealed package. Features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 30V. Offers a fall time of 7000ns and a maximum power dissipation of 250mW, operating within a temperature range of -65°C to 125°C. This RoHS compliant component has a 25° viewing angle.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.84mm |
| Height | 6.86mm |
| Length | 5.84mm |
| Polarity | NPN |
| Fall Time | 7000ns |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 890nm |
| Lead Length | 12.7mm |
| Orientation | Top View |
| Package/Case | TO-18 |
| Viewing Angle | 25° |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Material | SILICON |
| Package Quantity | 25 |
| Power Consumption | 250mW |
| Power Dissipation | 250mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 400mV |
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