OPB365P55

OPB365P55 - TT
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Краткое описание: Phototransistor, 30V, 30mA, 100mW, Chassis Mount, -40°C to 85°C
Производитель TT
Категория Слот

Дополнительная информация

The OPB365P55 phototransistor has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It can dissipate up to 100mW of power and operates within a temperature range of -40°C to 85°C. The device is mounted via screws and is packaged in a bulk quantity of 25 units. The OPB365P55 is compliant with RoHS regulations and features a wavelength of 890nm.
RoHS Compliant
Mount Chassis Mount, Screw
Lead Free Lead Free
Packaging Bulk
Wavelength 890nm
RoHS Compliant Yes
Forward Current 50mA
Package Quantity 25
Power Dissipation 100mW
Number of Elements 1
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Reverse Breakdown Voltage 2V
Collector-emitter Voltage-Max 30V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V

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