OPB375N55
Снят с производства
Краткое описание:
Phototransistor, 30V, 30mA, 100mW, Chassis Mount, -40°C to 85°C
Дополнительная информация
The OPB375N55 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It has a power dissipation of 100mW and is designed for chassis mount applications. The device operates within a temperature range of -40°C to 85°C and is compliant with RoHS regulations. The OPB375N55 is a single-element phototransistor with a wavelength of 890nm.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Wavelength | 890nm |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
