OPB375T11

OPB375T11 - TT
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Краткое описание: NPN Phototransistor, 30V, 30mA, Through Hole, -40°C to 85°C
Производитель TT
Категория Слот

Дополнительная информация

The OPB375T11 is a single-element NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for through-hole mounting and operates within a temperature range of -40°C to 85°C. This device is suitable for applications requiring a phototransistor with a high level of reliability and is compliant with RoHS regulations.
RoHS Compliant
Mount Through Hole, Screw
Polarity NPN
Packaging Bulk
Wavelength 890nm
RoHS Compliant Yes
Forward Current 50mA
Package Quantity 25
Power Dissipation 100mW
Number of Elements 1
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Reverse Breakdown Voltage 2V
Collector-emitter Voltage-Max 30V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V

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