OPB606A

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OPB606A - TT
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Краткое описание: Phototransistor 30V 50mA 75mW Through Hole
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

The OPB606A phototransistor has a collector emitter breakdown voltage of 30V and a maximum collector current of 25mA. It can handle a power dissipation of 75mW and operates within a temperature range of -40°C to 85°C. The device is packaged in a bulk package and is RoHS compliant. It is a single-element phototransistor with a sensing distance of 1.27mm and a wavelength of 935nm.
RoHS Compliant
Mount Through Hole
Height 4.7mm
Material Plastic
Lead Free Lead Free
Packaging Bulk
Wavelength 935nm
Output Type Phototransistor
Power Supply 5V
Input Current 20mA
RoHS Compliant Yes
Forward Current 50mA
Sensing Distance 1.27mm
Power Dissipation 75mW
Number of Elements 1
Reach SVHC Compliant No
Reverse Voltage (DC) 2V
Max Collector Current 25mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Reverse Breakdown Voltage 2V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V

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