OPB741WZ
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Краткое описание:
30V 40mA Chassis Mount Phototransistor
Дополнительная информация
The OPB741WZ is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum operating temperature range of -40°C to 80°C. It is designed for chassis mount through-hole applications and has a power dissipation of 100mW. The device is RoHS compliant and has a sensing distance of 0.15inch. The OPB741WZ is suitable for use in applications where a resistive or magnetic position sensor is required.
| RoHS | Compliant |
| Mount | Chassis Mount, Through Hole |
| Packaging | Bulk |
| Wavelength | 890nm |
| Output Type | Phototransistor |
| RoHS Compliant | Yes |
| Forward Current | 40mA |
| Reverse Voltage | 2V |
| Package Quantity | 25 |
| Sensing Distance | 0.15inch |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 30V |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
