OPB806
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Краткое описание:
Phototransistor 30V 50mA Through Hole IR Sensor 935nm 100mW
Дополнительная информация
The OPB806 phototransistor has a collector-emitter breakdown voltage of 30V and a forward current of 50mA. It operates within a temperature range of -40°C to 85°C and is RoHS compliant. The device is packaged in a plastic package and is available in a bulk quantity of 25 units. The OPB806 is a lead-free component with a power dissipation of 100mW.
| RoHS | Compliant |
| Mount | Through Hole, Screw |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 935nm |
| Touchscreen | Infrared (IR) |
| Input Current | 20mA |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Sensing Distance | 0.125inch |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Reach SVHC Compliant | No |
| Reverse Voltage (DC) | 2V |
| Max Breakdown Voltage | 30V |
| Operating Supply Voltage | 1.7V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
