OPB821S3Z
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Краткое описание:
Phototransistor, IR, 890nm, 50mA, 100mW, Chassis Mount
Дополнительная информация
The OPB821S3Z is a phototransistor with an infrared sensing distance of 0.08inch and a wavelength of 890nm. It can handle a maximum forward current of 50mA and a power dissipation of 100mW. The device is mounted using a screw and is suitable for use in chassis mount applications. The OPB821S3Z has a maximum operating temperature of 85°C and a minimum operating temperature of -40°C. It is compliant with RoHS regulations and is available in a ROHS COMPLIANT, PLASTIC PACKAGE-4 package type.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 1 |
| Sensing Distance | 0.08inch |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Output Configuration | Phototransistor |
| Max Breakdown Voltage | 30V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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