OPB827C
Снят с производства
Увеличить
Краткое описание:
Phototransistor IR 890nm 50mA 100mW Through Hole
Дополнительная информация
The OPB827C is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum operating temperature of 85°C. It is designed for use in applications where a through-hole mount is required, and is available in a RoHS compliant plastic package. The device has a forward current of 50mA and a power dissipation of 100mW. It is suitable for use in optical sensing applications, including slotted photointerrupters.
| RoHS | Compliant |
| Mount | Through Hole, Screw |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
