OPB830L51
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Краткое описание:
Phototransistor, IR, 890nm, 100mW, Through Hole, -40°C to 85°C
Дополнительная информация
The OPB830L51 is a phototransistor with an infrared sensing distance of 0.125inch and a wavelength of 890nm. It has a power dissipation of 100mW and is available in a ROHS compliant, plastic package. The device is designed for through hole mounting and has a maximum operating temperature range of -40°C to 85°C. It is a single-channel, slotted photointerrupter with a maximum collector current of 30mA and a maximum collector-emitter breakdown voltage of 30V.
| RoHS | Compliant |
| Mount | Through Hole, Screw |
| Width | 12.95mm |
| Height | 10.54mm |
| Length | 23.75mm |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Sensing Distance | 0.125inch |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Output Configuration | Phototransistor |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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