OPB842W51Z
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Краткое описание:
Phototransistor, IR, 880nm, 30V, 30mA, Chassis Mount
Дополнительная информация
The OPB842W51Z phototransistor has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for chassis mount with screw and has a power dissipation of 100mW. The device operates within a temperature range of -40°C to 80°C and is compliant with RoHS regulations. It is sensitive to infrared light with a wavelength of 880nm and a sensing distance of 0.125inch.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Wavelength | 880nm |
| Touchscreen | Infrared (IR) |
| Input Current | 20mA |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Sensing Distance | 0.125inch |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Output Configuration | Phototransistor |
| Reach SVHC Compliant | No |
| Reverse Voltage (DC) | 2V |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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