OPB861L55
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Краткое описание:
NPN Phototransistor 30V 50mA 100mW Through Hole
Дополнительная информация
The OPB861L55 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It operates within a temperature range of -40°C to 85°C and is available in a through-hole package. The device is RoHS compliant and has a power dissipation of 100mW. It is suitable for use in applications where a phototransistor is required.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 890nm |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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