OPB861N51
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Краткое описание:
Phototransistor, Infrared, 880nm, 30V, 50mA, Chassis Mount
Дополнительная информация
The OPB861N51 is a phototransistor with an infrared wavelength of 880nm and a collector-emitter breakdown voltage of 30V. It can handle a maximum forward current of 50mA and has a power dissipation of 100mW. The device is available in a ROHS compliant, plastic package-4 and is suitable for chassis mount through hole applications. The OPB861N51 operates within a temperature range of -40°C to 85°C and is not radiation hardened.
| RoHS | Compliant |
| Mount | Chassis Mount, Through Hole |
| Packaging | Bulk |
| Wavelength | 880nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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