OPB865N11
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Краткое описание:
Phototransistor, 30V, 30mA, Chassis Mount, Through Hole, -40°C to 85°C
Дополнительная информация
The OPB865N11 is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for chassis mount, through hole applications and operates over a temperature range of -40°C to 85°C. The device is compliant with RoHS regulations and has a power dissipation of 100mW.
| RoHS | Compliant |
| Mount | Chassis Mount, Through Hole |
| Height | 11.1mm |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 880nm |
| Input Current | 50mA |
| Output Current | 30mA |
| Output Voltage | 30V |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Power Dissipation | 100mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Output Configuration | Phototransistor |
| Reach SVHC Compliant | Unknown |
| Reverse Voltage (DC) | 2V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
