OPB866N55
Увеличить
Краткое описание:
Phototransistor, IR, 890nm, 30V, 30mA, Chassis Mount, Through Hole
Дополнительная информация
The OPB866N55 is a phototransistor with an infrared (IR) wavelength of 890nm. It has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. The device is designed for chassis mount through-hole applications and has a power dissipation of 100mW. The OPB866N55 is RoHS compliant and has an operating temperature range of -40°C to 85°C.
| RoHS | Compliant |
| Mount | Chassis Mount, Through Hole |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
