OPB867T55
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Краткое описание:
Phototransistor, IR, 890nm, 30V, 30mA, Through Hole, -40°C to 85°C
Дополнительная информация
The OPB867T55 is a phototransistor with an infrared wavelength of 890nm and a collector-emitter breakdown voltage of 30V. It can handle a maximum collector current of 30mA and a power dissipation of 100mW. The device is available in a RoHS compliant, plastic package with a 4-pin configuration. It is suitable for use in temperatures ranging from -40°C to 85°C. The OPB867T55 is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Through Hole, Screw |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| Output Current | 30mA |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Reach SVHC Compliant | Unknown |
| Reverse Voltage (DC) | 2V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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