OPB870N51TX

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OPB870N51TX - TT
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Краткое описание: Infrared Phototransistor Chassis Mount 30V 30mA -40°C to 85°C
Производитель TT
Категория Разнообразный
Статус производства Производится (ACTIVE)

Дополнительная информация

The OPB870N51TX is an infrared phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It operates within a temperature range of -40°C to 85°C and is mounted on a chassis. This component is not RoHS compliant and is packaged in bulk.
RoHS Not Compliant
Mount Chassis Mount
Packaging Bulk
Touchscreen Infrared (IR)
RoHS Compliant No
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector Emitter Breakdown Voltage 30V