OPB870N55
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Краткое описание:
Phototransistor, IR, 890nm, 30V, 30mA, 100mW, Chassis Mount, Through Hole
Дополнительная информация
The OPB870N55 is a phototransistor with an infrared wavelength of 890nm and a collector-emitter breakdown voltage of 30V. It can handle a maximum collector current of 30mA and a power dissipation of 100mW. The device is designed for chassis mount, through hole mounting and is compliant with RoHS regulations. The OPB870N55 operates within a temperature range of -40°C to 85°C.
| RoHS | Compliant |
| Mount | Chassis Mount, Through Hole |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
