OPB870P51

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OPB870P51 - TT
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Краткое описание: 30V 50mA Chassis Mount Phototransistor Sensor 890nm IR
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

The OPB870P51 is a phototransistor sensor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It operates within a temperature range of -40°C to 85°C and has a power dissipation of 100mW. The device is RoHS compliant and available in a ROHS COMPLIANT, PLASTIC PACKAGE-4. It is suitable for use in infrared (IR) touchscreen applications.
RoHS Compliant
Mount Chassis Mount
Packaging Bulk
Wavelength 890nm
Touchscreen Infrared (IR)
RoHS Compliant Yes
Forward Current 50mA
Package Quantity 25
Power Dissipation 100mW
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 30V
Collector Emitter Breakdown Voltage 30V