OPB870T55TX

Производится
OPB870T55TX - TT
Краткое описание: Infrared Phototransistor, 30V, 30mA, Through Hole, -40°C to 85°C
Производитель TT
Категория Разнообразный
Статус производства Производится (ACTIVE)

Дополнительная информация

The OPB870T55TX is an infrared phototransistor from TT, with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for operation over a temperature range of -40°C to 85°C and is available in a through-hole packaging configuration. This device is not RoHS compliant.
RoHS Not Compliant
Mount Through Hole
Packaging Bulk
Touchscreen Infrared (IR)
RoHS Compliant No
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector Emitter Breakdown Voltage 30V