OPB871N51
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Краткое описание:
Phototransistor, IR, 890nm, 30V, 30mA, Chassis Mount, Through Hole, -40°C to 85°C
Дополнительная информация
The OPB871N51 is a phototransistor with an infrared sensing distance of 0.125inch and a wavelength of 890nm. It has a maximum collector current of 30mA and a maximum operating temperature range of -40°C to 85°C. The device is packaged in a ROHS compliant, plastic package and is suitable for chassis mount through hole applications. The OPB871N51 is RoHS compliant and has a power dissipation of 100mW.
| RoHS | Compliant |
| Mount | Chassis Mount, Through Hole |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Sensing Distance | 0.125inch |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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