OPB872N51

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OPB872N51 - TT
Краткое описание: 30V 50mA Chassis Mount Phototransistor Sensor 890nm IR
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

The OPB872N51 is a phototransistor sensor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It operates within a temperature range of -40°C to 85°C and has a power dissipation of 100mW. This RoHS compliant device is packaged in a plastic package-4 and is available in quantities of 25. It is suitable for use in infrared (IR) applications with a wavelength of 890nm.
RoHS Compliant
Mount Chassis Mount
Packaging Bulk
Wavelength 890nm
Touchscreen Infrared (IR)
RoHS Compliant Yes
Forward Current 50mA
Package Quantity 25
Power Dissipation 100mW
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 30V
Collector Emitter Breakdown Voltage 30V