OPB876T55
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Краткое описание:
Phototransistor, IR, 890nm, 100mW, Through Hole, -40°C to 85°C
Дополнительная информация
This phototransistor has a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for use in applications with a maximum power dissipation of 100mW and is packaged in a ROHS compliant, plastic package. The device is suitable for use in temperatures ranging from -40°C to 85°C and is not radiation hardened. It is available in a bulk packaging quantity of 25 units.
| RoHS | Compliant |
| Mount | Through Hole, Screw |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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