OPB877N51
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Краткое описание:
NPN Phototransistor, 30V, 50mA, Chassis Mount, 890nm
Дополнительная информация
The OPB877N51 is a NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It is designed for chassis mount applications and has a power dissipation of 100mW. The device operates over a temperature range of -40°C to 85°C and is compliant with RoHS regulations. It has a wavelength of 890nm and is available in a ROHS compliant, plastic package-4.
| RoHS | Compliant |
| Mount | Chassis Mount |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 890nm |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
