OPB877P55

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OPB877P55 - TT
Краткое описание: Infrared Phototransistor, 890nm, 100mW, Chassis Mount, -40°C to 85°C
Производитель TT
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The OPB877P55 is an infrared phototransistor from TT with a wavelength of 890nm and a power dissipation of 100mW. It is designed for chassis mount applications and operates within a temperature range of -40°C to 85°C. This component is RoHS compliant and suitable for use in various optical sensing applications.
RoHS Compliant
Mount Chassis Mount
Packaging Bulk
Wavelength 890nm
Touchscreen Infrared (IR)
RoHS Compliant Yes
Forward Current 50mA
Package Quantity 25
Power Dissipation 100mW
Output Configuration Phototransistor
Max Collector Current 30mA
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 30V
Collector Emitter Breakdown Voltage 30V