OPB881N51Z
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Краткое описание:
Phototransistor 30V 50mA 100mW 890nm IR Infrared
Дополнительная информация
The OPB881N51Z is a phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It operates within a temperature range of -40°C to 85°C and is suitable for infrared applications with a wavelength of 890nm. This RoHS compliant device is available in a plastic package with 25 units per package and is suitable for free-hanging mounting.
| RoHS | Compliant |
| Mount | Free Hanging |
| Packaging | Bulk |
| Wavelength | 890nm |
| Touchscreen | Infrared (IR) |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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