OPB881T51Z
Краткое описание:
NPN Phototransistor, 30V, 30mA, 100mW, Chassis Mount, 890nm
Дополнительная информация
The OPB881T51Z is a RoHS compliant, NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It can operate within a temperature range of -40°C to 85°C and has a power dissipation of 100mW. This phototransistor is packaged in a ROHS compliant, plastic package-4 and is suitable for chassis mount applications.
| RoHS | Compliant |
| Mount | Chassis Mount |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 890nm |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
