OPB882T55Z
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Краткое описание:
NPN Phototransistor, 30V 50mA 100mW Chassis Mount
Дополнительная информация
The OPB882T55Z is a single-element NPN phototransistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 30mA. It has a power dissipation of 100mW and operates within a temperature range of -40°C to 85°C. The device is packaged in a RoHS compliant plastic package and is suitable for chassis mount applications using a screw. It is compliant with RoHS regulations.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Polarity | NPN |
| Packaging | Bulk |
| Wavelength | 890nm |
| RoHS Compliant | Yes |
| Forward Current | 50mA |
| Package Quantity | 25 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Reverse Breakdown Voltage | 2V |
| Collector-emitter Voltage-Max | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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