OPS691
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Краткое описание:
NPN Phototransistor, 30V, 100mW, Through Hole, -40°C to 100°C
Дополнительная информация
The OPS691 is a single-element NPN phototransistor with a collector-emitter breakdown voltage of 30V and a power dissipation of 100mW. It is available in a radial package with a through-hole mount. The device operates over a temperature range of -40°C to 100°C and is compliant with RoHS regulations. The OPS691 is suitable for use in applications where a photointerrupter is required.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Package/Case | Radial |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
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