PD57018-E
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Краткое описание:
RF MOSFET N-CH 65V 2.5A 1GHz 18W 3-Pin PowerSO-10RF
Дополнительная информация
N-Channel RF MOSFET transistor featuring 65V drain-source breakdown voltage and 2.5A continuous drain current. Operates up to 1GHz with 16.5dB power gain and 18W maximum output power. Surface mountable in a 3-Pin PowerSO-10RF package, this RoHS compliant component offers a wide operating temperature range from -65°C to 165°C.
| Gain | 16.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.4mm |
| Height | 3.5mm |
| Length | 7.5mm |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Gain | 16.5dB |
| Output Power | 18W |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 18W |
| Package Quantity | 400 |
| Power Dissipation | 31.7W |
| Number of Elements | 1 |
| Operating Frequency | 1 GHz |
| Radiation Hardening | No |
| Max Power Dissipation | 31.7W |
| DS Breakdown Voltage-Min | 65V |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 760mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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