PD57018TR-E
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Краткое описание:
18W 65V 1GHz N-CH LDMOS RF Transistor, Surface Mount
Дополнительная информация
High-power LDMOS transistor for RF applications, delivering 18W output power at 945MHz and 28V test voltage. Features a 65V drain-to-source breakdown voltage and 16.5dB gain, operating up to 1GHz. Housed in a surface-mount PSO-10RF plastic package with a wide operating temperature range of -65°C to 165°C. This N-channel device offers 2.5A continuous drain current and 31.7W power dissipation, supplied in tape and reel packaging.
| Gain | 16.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Packaging | Tape and Reel |
| Output Power | 18W |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| Max Output Power | 18W |
| Package Quantity | 600 |
| Power Dissipation | 31.7W |
| Number of Elements | 1 |
| Max Power Dissipation | 31.7W |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 760mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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