PD57030-E
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Краткое описание:
30W 1GHz RF LDMOS Transistor, 65V, 14dB Gain, N-Channel
Дополнительная информация
N-channel LDMOS transistor for RF applications, delivering 30W output power at 28V test voltage. Features a maximum operating frequency of 1GHz with 14dB power gain. Continuous drain current is 4A, and drain-to-source voltage rating is 65V. This surface-mount component is housed in a PSO-10RF plastic package, operates from -65°C to 165°C, and is RoHS compliant.
| Gain | 14dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.4mm |
| Height | 3.5mm |
| Length | 7.5mm |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Power Gain | 14dB |
| Output Power | 30W |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 30W |
| Package Quantity | 400 |
| Power Dissipation | 52.8W |
| Number of Elements | 1 |
| Operating Frequency | 1 GHz |
| Radiation Hardening | No |
| Max Power Dissipation | 52.8W |
| DS Breakdown Voltage-Min | 65V |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 65V |
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