PD57060-E
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Краткое описание:
RF MOSFET N-CH 65V 7A 945MHz LDMOS 60W SM
Дополнительная информация
RF MOSFET N-CHANNEL transistor, 65V drain-source breakdown voltage, 7A continuous drain current, and 60W maximum output power. Features include 14.3dB gain at 945MHz, 1GHz maximum frequency, and 79W power dissipation. This surface-mount component operates from -65°C to 165°C and utilizes LDMOS technology. It is RoHS compliant and lead-free, supplied in a 3-pin PowerSO-10RF package.
| Gain | 14.3dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Technology | LDMOS |
| Output Power | 60W |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 60W |
| Package Quantity | 50 |
| Power Dissipation | 79W |
| Number of Elements | 1 |
| Max Power Dissipation | 79W |
| DS Breakdown Voltage-Min | 65V |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
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