PD57060S-E
Производится
Увеличить
Краткое описание:
60W 28V 1GHz LDMOS RF Transistor N-CH 65V 7A SM
Дополнительная информация
60W LDMOS RF Transistor for high-frequency applications up to 1GHz. Features 65V drain-to-source breakdown voltage and 7A continuous drain current. Delivers 14.3dB gain at 945MHz with a 28V test voltage. Operates from -65°C to 165°C, housed in a surface-mount PSO-10RF plastic package. RoHS compliant and lead-free.
| Gain | 14.3dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | N-CHANNEL |
| Frequency | 945MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Technology | LDMOS |
| Output Power | 60W |
| Test Voltage | 28V |
| Max Frequency | 1GHz |
| RoHS Compliant | Yes |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Max Output Power | 60W |
| Package Quantity | 50 |
| Power Dissipation | 79W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 79W |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 65V |
| Drain to Source Breakdown Voltage | 65V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
