PDTC114TE,115
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Краткое описание:
NPN BJT Transistor, 50V VCEO, 100mA IC, 150mW PD, SC-75 SMD
Дополнительная информация
NPN bipolar junction transistor featuring integrated 10 kOhm base resistor and open second resistor. Surface mount SC package with 3 leads, measuring 1.8mm x 0.9mm x 0.85mm. Offers a 50V collector-emitter breakdown voltage and 150mV collector-emitter saturation voltage. Maximum collector current is 100mA with a minimum hFE of 200. Operates from -65°C to 150°C with 150mW power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.9mm |
| Height | 0.85mm |
| Length | 1.8mm |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector-emitter Voltage-Max | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
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