PH5330E,115
Снят с производства
Увеличить
Краткое описание:
N-Channel MOSFET, 30V, 80A, 5.7mR, SOT-669, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring a 30V drain-to-source breakdown voltage and 15A continuous drain current. Offers a low 5.7mΩ drain-to-source resistance at a 10V gate-to-source voltage. Designed for surface mounting in a SOT-669 package, this component boasts a maximum power dissipation of 62.5W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 13ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.7mR |
| Package/Case | SOT-669 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.01nF |
| Power Dissipation | 62.5W |
| Threshold Voltage | 1.7V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 56ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 62.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
