PMCPB5530X,115
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Краткое описание:
Dual N/P-CH MOSFET 20V 4A SOT-23-6 HUSON EP
Дополнительная информация
Dual N/P-channel enhancement mode MOSFET, 20V drain-source voltage, 4A continuous drain current. Surface mount HUSON EP package (2.1mm x 2.1mm x 0.61mm) with 6 pins. Features TMOS process technology, 0.9V gate threshold voltage, and low drain-source on-resistance (34mΩ for N-channel, 70mΩ for P-channel at 4.5V). Operates from -55°C to 150°C with 1170mW power dissipation.
| PCB | 6 |
| ECCN | EAR99 |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 6 |
| Automotive | Yes |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | HUSON EP |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 2.1(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 0.61(Max) |
| Package Length (mm) | 2.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1170mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | [email protected]@N Channel|8.1@5V@P ChannelnC |
| Maximum Gate Source Voltage | 12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 0.9V |
| Maximum Drain Source Resistance | [email protected]@N Channel|[email protected]@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 660@10V@N Channel|785@10V@P ChannelpF |
| Maximum Continuous Drain Current | 4A |
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