PMDPB30XN,115
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Краткое описание:
Dual N-Channel MOSFET, 20V, 4A, 40R, 1170mW, HUSON EP
Дополнительная информация
The PMDPB30XN,115 is a dual N-channel MOSFET with a maximum drain source voltage of 20V and a maximum continuous drain current of 4A. It features a maximum drain source resistance of 40 ohms at 4.5V and a maximum power dissipation of 1170mW. The device is packaged in a HUSON EP surface mount package and has a typical input capacitance of 660 picofarads at 10V. The operating temperature range is from -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | H2HX9 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | HUSON EP |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 2.1(Max) |
| Process Technology | TMOS |
| Package Height (mm) | 0.61(Max) |
| Package Length (mm) | 2.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 1170mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 14.4nC |
| Typical Gate Charge @ Vgs | 14.4@10VnC |
| Maximum Gate Source Voltage | 12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 660@10VpF |
| Maximum Continuous Drain Current | 4A |
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