PN2222ABU
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NPN BJT Transistor, 40V VCEO, 1A IC, 300MHz fT, TO-92
Дополнительная информация
NPN bipolar junction transistor (BJT) in a TO-92 package, featuring a 40V collector-emitter voltage (VCEO) and a 500mA continuous collector current. This component offers a minimum DC current gain (hFE) of 100 and a transition frequency of 300MHz. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. Designed for through-hole mounting, it is supplied in bulk packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.179g |
| hFE Min | 100 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 300MHz |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 1000 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 250ns |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
