PN2222ATFR

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PN2222ATFR - Onsemi
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Краткое описание: NPN BJT Transistor, 40V VCEO, 1A IC, 300MHz, TO-92, 2000-REEL
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) with a 40V Collector-Emitter Voltage (VCEO) and 500mA continuous collector current. Features a 300MHz transition frequency and a minimum DC current gain (hFE) of 100. Packaged in a TO-92-3 through-hole mount configuration, supplied on a 2000-piece tape and reel. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 4.19mm
Height 5.33mm
Length 5.2mm
Weight 0.24g
hFE Min 100
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case TO-92-3
Max Frequency 300MHz
Current Rating 500mA
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 2000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Max Collector Current 1A
Max Power Dissipation 625mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 75V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 40V
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1V

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