PSMN01560PS
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Краткое описание:
N-CH Power MOSFET 60V 50A TO-220AB Through Hole
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 50A continuous drain current. This single-element transistor is housed in a TO-220AB package with through-hole mounting, offering a low drain-source on-resistance of 14.8 mOhm at 10V. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 20.9 nC at 10V, and a typical input capacitance of 1220 pF at 30V. Maximum power dissipation reaches 86000 mW, with an operating temperature range from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | H2HX9 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Package Length (mm) | 10.3(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 86000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 20.9nC |
| Typical Gate Charge @ Vgs | 20.9@10V|17@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 14.8@10VmOhm |
| Typical Input Capacitance @ Vds | 1220@30VpF |
| Maximum Continuous Drain Current | 50A |
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